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| TPCP8102 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCP8102 Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package 2.40.1 0.475 1 4 Unit: mm 0.330.05 0.05 M A 8 5 High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement model: Vth = -0.45 to -1.2 V (VDS = -10 V, ID = -200 A) S 0.65 2.90.1 B A 0.05 M B 0.80.05 Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 12 -7.2 -28.8 1.68 0.84 33.7 -7.2 0.168 150 -55~150 Unit V V V A W W mJ A mJ C C 0.025 S 0.170.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA 2-3V1K Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.017 g (typ.) Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Circuit Configuration 8 7 6 5 Marking (Note 5) 8 7 6 5 8102 1 2 3 4 1 2 3 4 Lot No. 1 2006-11-17 2.80.1 Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.) TPCP8102 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 74.4 148.8 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = -16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -7.2 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCP8102 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 12 V VDS = -10 V, ID = -200 A VGS = -2.0 V, ID = -1.8 A Drain-source ON-resistance RDS (ON) VGS = -2.5 V, ID = -3.6 A VGS = -4.5 V, ID = -3.6 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge tf toff Qg Qgs1 Qgd |Yfs| Ciss Crss Coss tr ton 0V ID = -3.6 A RL = 2.77 VOUT VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, ID = -3.6 A Min -20 -8 -0.45 12 VDD -16 V, VGS = -5 V, - ID = -7.2 A Typ. 29 20 13.5 24 2560 330 380 5 14 42 142 33 5.4 10 Max 10 -10 -1.2 80 30 18 ns nC pF S m Unit A A V V VGS -5 V 4.7 Duty < 1%, tw = 10 s = Test Condition VDD -10 V - Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Min Typ. Max -28.8 1.2 Unit A V Forward voltage (diode) IDR = -3.6 A, VGS = 0 V 3 2006-11-17 TPCP8102 ID - VDS -5 -10 -1.7 -1.8 -2 -3 -5 -3 -1.6 Common source Ta = 25C Pulse test -1.5 -10 -10 ID - VDS -1.8 -1.9 -2 -3 -5 -6 -1.7 Common source Ta = 25C Pulse test -1.6 (A) ID Drain current Drain current ID (A) -4 -8 -2 -1.4 -1 -4 -1.5 VGS = -1.3 V -2 -1.4 VGS = -1.3 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -12 -0.5 VDS - VGS VDS (V) Common source Ta = 25C Pulse test Common source VDS = -10 V -10 Pulse test -0.4 (A) ID -8 -6 100 -4 25 -2 Drain-source voltage -0.3 Drain current -0.2 ID = -7.2A -0.1 -3.6 Ta = -55C 0 0 -1 -2 -3 0 0 -1.8 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test 100 RDS (ON) - ID |Yfs| (S) Drain-source ON-resistance RDS (ON) (m) Forward transfer admittance 10 Ta = -55C 100 VGS = -2 V -2.5 -4.5 10 25 1 0.1 -0.1 -1 -10 -100 1 -0.1 -1 -10 Common source Ta = 25C Pulse test -100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPCP8102 RDS (ON) - Ta 60 Common source Pulse test ID = -7.2 A 40 -3.6 A -1.8 A 30 VGS = -2 V -100 IDR - VDS (A) IDR Drain-source ON-resistance RDS (ON) (m) 50 -10 -10 -5 -3 V -3 -1 VGS = 0 V Drain reverse current 20 VGS = -2.5 V -1 Common source Ta = 25C Pulse test -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 10 VGS = -4.5 V 0 -80 -40 0 ID = -7.2 A, -3.6 A, -1.8 A 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) C - VDS 10000 -1.2 Vth - Ta Common source Vth (V) -1.0 VDS = -10 V ID = -200 A Pulse test (pF) Gate threshold voltage Ciss -0.8 C -0.6 Capacitance 1000 -0.4 Common source Ta = 25C VGS = 0 V f = 1 MHz 100 0.1 10 Coss Crss -0.2 0 -80 100 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) 2.0 PD - Ta (1) Dynamic input/output characteristics -20 -8 (W) VDS (V) 1.6 PD -15 VDS -4 -8 -8 -6 Drain power dissipation Drain-source voltage (2) 0.8 -10 VDD = -16 V -4 0.4 -5 -4 VGS 0 0 Common source ID = 7.2 A Ta = 25C Pulse test 30 -2 40 80 160 200 0 0 10 20 0 40 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage 1.2 VGS (2) Device mounted on a glass-epoxy board (b) (Note 2b) t=5s VDD = -16 V (V) (1) Device mounted on a glass-epoxy board (a) (Note 2a) TPCP8102 rth(j-c) - tw (C/W) 1000 Device mounted on a glass-epoxy board (b) (Note 2b) Device mounted on a glass-epoxy board (a) (Note 2a) Single pulse (2) (1) rth Transient thermal impedance 100 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 100 ID max (pulse) * 1 ms * (A) Drain current ID 10 10 ms * 1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 0.1 0.1 VDSS max 10 Drain-source voltage VDS (V) 10 6 2006-11-17 TPCP8102 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-17 |
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